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SS6610/11G
High-efficiency Synchronous Step-up DC/DC Converter
PRODUCT SUMMARY
High efficiency boost converter Output current up to 500mA No external diode required
DESCRIPTION
The SS6610/11G are high-efficiency step-up DC/DC converters, with a start-up voltage as low as 0.8V, and an operating voltage down to 0.7V. Consuming only 20A of quiescent current, these devices include a built-in synchronous rectifier that reduces size and cost by eliminating the need for an external Schottky diode, and improves overall efficiency by minimizing losses. The switching frequency can range up to 500KHz depending on the load and input voltage. The output voltage can be easily set by: 1) two external resistors for 1.8V to 5.5V; 2) connecting FB to OUT to get 3.3V; or 3) connecting FB to GND to get 5.0V. The peak current of the internal switch is fixed at 1A (SS6610G) or 0.65A (SS6611G) for design flexibility.
FEATURES
Quiescent supply current of 20mA. Power-saving shutdown mode (0.1A typical). Internal synchronous rectifier On-chip low-battery detector. Low battery hysteresis
Pb-free, RoHS compliant MSOP-8
APPLICATIONS
Palmtop and notebook computers. PDAs Wireless phones Pocket organizers. Digital cameras. Hand-held devices with 1 to 3 cells of NiMH/NiCd batteries.
TYPICAL APPLICATION CIRCUIT
VIN + 47F OFF SHDN SS6610G SS6611G Low Battery Detection LBI REF 0.1F GND LX OUT 22H Output 3.3V, 5.0V or adjustable from 1.8V to 5.5V + 47F up to 300mA output Low-battery Detect Out
ON
LBO FB
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SS6610/11G
ORDERING INFORMATION
SS6610GO TR SS6611GO TR
PIN CONFIGURATION
MSOP-8
TOP VIEW
Packing TR: Tape and reel Package type GO: RoHS-compliant MSOP-8
FB 1
LBI 2 LBO 3 REF 4
8 7 6 5
OUT LX
GND
SHDN
Example: SS6610GO TR
SS6610 in RoHS-compliant MSOP-8 package, shipped on tape and reel
ABSOLUTE MAXIMUM RATINGS
Supply voltage (OUT to GND)
Switch voltage (LX to GND)
SHDN , LBO to GND
8.0V
VOUT+ 0.3V
6.0V
VOUT+0.3V
-1.5A to +1.5A
-1.5A to +1.5A
-40C ~ +85C
-65C ~150C
LBI, REF, FB, to GND
Switch current (LX)
Output current (OUT)
Operating temperature range
Storage temperature range
TEST CIRCUIT
Refer to the typical application circuit on page 1.
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SS6610/11G
ELECTRICAL CHARACTERISTICS
(VIN = 2.0V, VOUT = 3.3V (FB = VOUT),RL =
, unless otherwise specified.)
MIN. TYP.
0.7 1.1 5.5 0.8 -2 1.1
PARAMETER
Minimum input voltage Operating voltage Start-up voltage Start-up voltage temp. coeff. Output voltage range Output voltage
TEST CONDITIONS
MAX.
UNIT
V V V mV/C
RL=3k (Note1)
VINSS6610G SS6611G SS6610G SS6611G
1.8 3.17 300 150 180 90 1.199 3.3 350 300
5.5 3.43 V
Steady-state output current (Note 2)
(VOUT =3.3V) FB=GND
(VOUT
mA 230 160 1.23 0.024 IREF = 0 to 100A VOUT = 1.8V to 5.5V 1.199 ILX = 100mA SS6610G LX switch current limit SS6611G LX leakage current Operating current into OUT (Note 3) Shutdown current into OUT VFB = 1.4V , VOUT = 3.3V 20 35 VLX=0V~4V; VOUT=5.5V 0.50 0.65 0.05 0.85 1 A A A 0.80 10 5 1.23 0.3 1.0 30 10 1.261 0.6 1.25 A 1.261 V mV/C mV mV/V V =5.0V)
Reference voltage Reference voltage temp. coeff. Reference load regulation Reference line regulation FB , LBI input threshold Internal switch on-resistance
IREF= 0
SHDN = GND VOUT= 3.3V ,ILOAD = 200mA VOUT = 2V ,ILOAD = 1mA
0.1 90
1
Efficiency
% 85
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SS6610/11G
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
LX switch on-time LX switch off-time FB input current LBI input current SHDN input current LBO low output voltage LBO off leakage current
TEST CONDITIONS
VFB =1V , VOUT = 3.3V VFB =1V , VOUT = 3.3V VFB = 1.4V VLBI = 1.4V V
SHDN
MIN.
2 0.6
TYP.
4 0.9 0.03 1 0.07 0.2
MAX.
7 1.4 50 50 50 0.4
UNIT
s s
nA nA nA
A
= 0 or VOUT
VLBI = 0, ISINK = 1mA V
LBO
= 5.5V, VLBI = 5.5V
0.07 50
1
mV
LBI hystereisis VIL SHDN input voltage VIH 0.8VOUT
0.2VOUT V
Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the input and output. Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load. Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery supply.
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS
160 140 0.4 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.5
Input Battery Current (A)
VOUT=5V (FB=GND)
Shutdown Current (A)
0.3
0.2
0.1
VOUT=3.3V (FB=OUT)
Input battery voltage (V) No-Load Battery Current vs. Input Battery
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Supply Voltage (V)
Fig. 1
1.8 1.6
Fig. 2
CCM/DCM Boundary Output Current (mA)
400 350 300 250 200 150 100 50
0 0.5
Shutdown Current vs. Supply Voltage
Start-Up Voltage (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.01
VOUT=5.0V (FB=GND)
L=22H CIN=100F COUT=100F
VOUT=3.3V (FB=OUT) VOUT=5.0V (FB=GND)
VOUT=3.3V (FB=OUT)
0.1
1
10
100
Output Current (mA) Fig. 3
100 90 80
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Input Voltage (V)
Start-Up Voltage vs. Output Current
220 200 180
Fig. 4
Turning Point between CCM & DCM
SS6610 (I LIMIT =1A)
Ripple Voltage (mV)
Efficiency (%)
70 60 50 40 30 20 10 0 0.01 0.1
VIN=1.2V VIN=2.4V VIN=3.6V VOUT=5.0V (FB=GND) SS6610 (I LIMIT =1A)
1 10 100 1000
160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 400 450 500 550 600 650
VIN=3.6V
VIN=2.4V VIN=1.2V
VOUT=5.0V L=22H CIN=47F COUT=47F
Output Current (mA)
Output Current (mA)
Fig. 5
Efficiency vs. Load Current (ref. to Fig.33)
Fig. 6
Ripple Voltage (ref. to Fig.33)
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TYPICAL PERFORMANCE CHARACTERISTICS
240
(Continued)
100
SS6610 (ILIMIT =1A)
200
90 80
Ripple Voltage (mV)
VIN=3.6V VIN=2.4V VIN=1.2V
160
Efficiency (%)
VIN=3.6V VIN=2.4V
VOUT=5.0V L=22H CIN=100F COUT=100F
400 500 600 700 800
70 60 50 40 30 20 10 0 0.01 0.1
120
80
VOUT=5.0V (FB=GND) SS6611 (I LIMIT =0.65A)
1 10 100 1000
40
VIN=1.2V
0 0 100 200 300
Output Current (mA)
Output Current (mA)
Fig. 7
160
Ripple Voltage (ref. to Fig.33)
Fig. 8
120
Efficiency vs. Load Current (ref. to Fig.33)
SS6611 (I LIMIT =0.65A)
140 120 100 80 60 40
SS6611 (I LIMIT =0.65A)
100
VIN=3.6V
Ripple Voltage (mV)
VIN=3.6V
Ripple Voltage (mV)
80
60
VIN=2.4V VIN=1.2V
20 0 0 50 100 150 200 250 300 350
VOUT=5.0V L=22H CIN=47F COUT=47F
400 450 500 550
40
VIN=2.4V VIN=1.2V
0 100 200 300
20
VOUT=5.0V L=22H CIN=100F COUT=100F
400 500 600
0
Output Current (mA)
Output Current (mA)
Fig. 9
100 90 80 70 60 50 40 30 20 10 0 0.01 0.1
Ripple Voltage (ref. to Fig.33)
260 240 220
Fig. 10
Ripple Voltage (ref. to Fig.33)
SS6610 (I LIMIT =1A)
Ripple Voltage (mV)
(V) Efficiency (%)
VIN=1.2V VIN=2.4V
200 180 160 140 120 100 80 60 40 20 0
VIN=2.4V
VOUT=3.3V L=22H CIN=47F COUT=47F
300 350 400 450 500 550 600
VOUT=3.3V (FB=OUT) SS6610 (I LIMIT =1A)
1 10 100 1000
VIN=1.2V
0
50
100
150
200
250
Output Current (mA)
Output Current (mA)
Fig. 11
Efficiency vs. Load Current (ref. to Fig.32)
Fig. 12
Ripple Voltage (ref. to Fig.32)
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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
100 140 120
SS6610 (I LIMIT =1A)
90 80
Ripple Voltage (mV)
Efficiency (%)
100 80 60 40 20
0 0
70 60 50 40 30 20 10
VIN=1.2V
VIN=2.4V
VIN=1.2V
VIN=2.4V
VOUT=3.3V
VOUT=3.3V (FB=OUT) SS6611 (I LIMIT =0.65A)
SS6610 (ILIMIT =1A)
50 100 150 200 250 300 350
CIN=100F COUT=100F
400 450 500 550
0 0.01
1
10
100
1000
Output Current (mA)
Output Current (mA)
Fig. 13
140
Ripple Voltage (ref. to Fig.32)
Fig. 14
120
Efficiency vs. Load Current (ref. to Fig.32)
SS6611 (I LIMIT =0.65A)
120
110 100
SS6611 (I LIMIT =0.65A)
Ripple Voltage (mV)
100
Ripple Voltage (mV)
90 80 70 60 50 40 30 20 10 0
80
VIN=2.4V
60 40
VIN=2.4V
VOUT=3.3V L=22H CIN=100F COUT=100F
200 250 300 350 400 450 500
VIN=1.2V
20 0 0 50 100 150 200 250 300
VOUT=3.3V L=22H CIN=47F COUT=47F
350 400 450 500
VIN=1.2V
0 50 100 150
Output Current (mA)
Output Current (mA)
Fig. 15
1.26
Ripple Voltage (ref. to Fig.32)
0.50 0.45
Fig. 16
Ripple Voltage (ref. to Fig.32)
1.25
P-Channel
0.40
Reference Voltage (V)
1.24
Resistance ()
0.35 0.30 0.25 0.20 0.15
1.23
N-Channel
1.22
1.21
0.10
IREF=0
1.20 -40 -20 0 20 40 60 80
0.05 0.00 -60
VOUT=3.3V ILX=100mA
-40
-20
0
20
40
60
80
100
Temperature (C)
Temperature (C)
Fig. 17
Reference Voltage vs. Temperature
Fig. 18
Switch Resistance vs. Temperature
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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
800 900
Maximum Output Current (mA)
700 600 500 400 300 200 100 0
VOUT=3.3V (FB=OUT) SS6610 (ILIMIT=1A)
Maximum Output Current (mA)
800 700 600 500 400 300 200 100 0
VOUT=5.0V (FB=GND) SS6610 (ILIMIT=1A)
SS6611 (ILIMIT=0.65A)
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
SS6611 (I LIMIT=0.65A)
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Fig. 19
1.2
Input Voltage (V) Maximum Output Current vs. Input Voltage
Fig. 20
160
Input Voltage (V) Maximum Output Current vs. Input Voltage
Switching Frequency fosc (KHz)
SS6610 (I LIMIT=1A)
1.0
140 120 100 80 60 40 20 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VOUT=5.0V
0.8
ILIM (A)
0.6
SS6611 (ILIMIT=0.65A)
0.4
VOUT=3.3V
0.2
IOUT=100mA
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Fig. 21
220
Output Voltage (V) Inductor Current vs. Output Voltage
Supply Voltage (V)
Fig. 22
Switching Frequency vs. Supply Voltage
Switching Frequency Fosc (KHz)
200 180 160 140 120 100 80 60 40 20 0 1 10
VIN=1.2V VOUT=3.3V
VIN=2.4V VOUT=3.3V
VIN=2.4V VOUT=3.3V
VIN=2.4V VOUT=5V
VIN=3.6V VOUT=5V
100 1000
Output Current (mA)
Fig. 23
Switching Frequency vs. Output Current
Fig. 24
LX Switching Waveform
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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
LX Pin Waveform VIN=2.4V VOUT=3.3V Loading=200mA Inductor Current VIN=2.4V VOUT=3.3V VOUT AC Couple Loading:
1mA 200mA
VOUT: AC Couple
Fig. 25
Heavy Load Waveform
Fig. 26
Load Transient Response
VIN
VIN=2.0V~3.0V VOUT=3.3V, IOUT=100mA
V SHDN
VOUT
VOUT
VOUT=3.3V CIN=COUT=47F
Fig. 27
Line Transient Response
Fig. 28 Exiting Shutdown
V SHDN
V SHDN
VOUT VOUT=3.3V CIN=COUT=100F
VOUT VOUT=5.0V CIN=COUT=47F
Fig. 29
Exiting Shutdown
Fig. 30
Exiting Shutdown
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TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
V SHDN
VOUT VOUT=5.0V CIN=COUT=100F
Fig. 31
Exiting Shutdown
BLOCK DIAGRAM
SHDN Minimum Off-Time One Shot
OUT + Q1 LX Q2 F/ F SQ R One Shot Max. On-Time + + Reference Voltage + Mirror FB REF C4
0.1F
C2 0.1F L
OUT C3 47F
VIN 47H + C1 47F
GND
LBO
LBI
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PIN DESCRIPTIONS
PIN 1: FB Connect to pin 8:OUT to get +3.3V output, connect to pin 6:GND to get +5.0V output, or use a resistor network to set the output voltage between +1.8V and +5.5V. Low-battery comparator input. Internally set at +1.23V to trip. Open-drain low-battery comparator output. Output is low when VLBI is <1.23V. LBO is high-impedance during shutdown. 1.23V reference voltage. Bypass with a 0.1F capacitor. PIN 5: SHDN Shutdown input. High = operating, low = shutdown. PIN 6: GND Ground PIN 7: LX N-channel and P-channel power MOSFET drain. PIN 8: OUT Power output. OUT provides the bootstrap power to the IC. PIN 4: REF
PIN 2: LBI PIN 3: LBO
APPLICATION INFORMATION
Overview
The SS6610/11 series are high-efficiency, step-up DC/DC converters, featuring a built-in synchronous rectifier, which reduces size and cost by eliminating the need for an external Schottky diode. The start-up voltage of the SS6610 and SS6611 is as low as 0.8V and they operate with an input voltage down to 0.7V. Quiescent supply current is only 20A. The internal P-MOSFET on-resistance is typically 0.3 to improve overall efficiency by minimizing AC losses. The output voltage can be easily set using two external resistors for 1.8V to 5.5V; connecting FB to OUT to get 3.3V; or connecting to GND to get 5.0V. The peak current of the internal switch is fixed at 1.0A (SS6610) or 0.65A (SS6611) for design flexibility. The current limits of the SS6610 and SS6611 are 1.0A and 0.65A respectively. The lower current limit allows the use of a physically smaller inductor in space-sensitive applications. current. The peak current of the internal N-MOSFET power switch can be fixed at 1.0A (SS6610) or 0.65A (SS6611). The switch frequency depends on either loading conditions or input voltage, and can range up to 500KHz. It is governed by a pair of oneshots that set a minimum off-time (1s) and a maximum on-time (4s).
Synchronous Rectification
Using the internal synchronous rectifier eliminates the need for an external Schottky diode, reducing the cost and board space. During the cycle of offtime, the P-MOSFET turns on and shuts the NMOSFET off. Due to the low turn-on resistance of the MOSFET, the synchronous rectifier signifcantly improves efficiency without an additional external Schottky diode. Thus, the conversion efficiency can be as high as 93%.
Reference Voltage PFM Control Scheme
A key feature of the SS6610 series is a unique minimum-off-time, constant-on-time, current-limited, pulse-frequency-modulation (PFM) control scheme (see BLOCK DIAGRAM) with ultra-low quiescent The reference voltage (REF) is nominally 1.23V for excellent T.C. performance. In addition, the REF pin can source up to 100A to an external circuit with good load regulation (<10mV). A bypass capacitor of 0.1F is required for proper operation and good performance.
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SS6610/11G
Shutdown
The whole circuit is shutdown when V SHDN is low. In
shutdown mode, the current can flow from the battery to the output due to the body diode of the P-MOSFET. VOUTfalls to approximately (Vin - 0.6V) and LX remains high impedance. The capacitance and load at OUT determine the rate at which VOUT decays. Shutdown can be pulled as high as 6V. Regardless of the voltage at OUT.
............................................................(2) where IOUT(MAX)=maximum output current in amps VIN=input voltage L=inductor value in H =efficiency (typically 0.9) tOFF=LX switch' off-time in s ILIM=1.0A or 0.65A
2. Capacitor Selection
Selecting the Output Voltage
VOUT can be simply set to 3.3V/5.0V by connecting the FB pin to OUT/GND due to the use of an internal resistor divider in the IC (Fig.32 and Fig.33). In order to adjust output voltage, a resistor divider is connected to VOUT, FB, GND (Fig.34). Vout can be calculated by the following equation: R5=R6 [(VOUT / VREF )-1] .....................................(1) where V REF =1.23V and VOUT ranges from 1.8V to 5.5V. The recommended R6 is 240k.
The output ripple voltage is related to the peak inductor current and the output capacitor ESR. Besides output ripple voltage, the output ripple current may also be of concern. A filter capacitor with low ESR is helpful to the efficiency and the steady state output current of the SS6610 series. Therefore a NIPPON MCM Series tantalum capacitor of 100F/6V is recommended. A smaller capacitor (down to 47F with higher ESR) is acceptable for light loads or in applications that can tolerate higher output ripple.
3. PCB Layout and Grounding
Low-Battery Detection
The SS6610 series contains an on-chip comparator with 50mV internal hysteresis (REF, REF+50mV) for low battery detection. If the voltage at LBI falls below the internal reference voltage, LBO ( an open-drain output) sinks current to GND.
Since the SS6610/11's switching frequency can range up to 500kHz, the SS6610/11 can be very sensitive. Careful printed circuit layout is important for minimizing ground bounce and noise. The OUT pin should be as clear as possible, and the GND pin should be placed close to the ground plane. Keep the IC's GND pin and the ground leads of the input and output filter capacitors less than 0.2in (5mm) apart. In addition, keep all connections to the FB and LX pins as short as possible. In particular, when using external feedback resistors, locate them as close to the FB pin as possible. To maximize output power and efficiency, and minimize output ripple voltage, use a ground plane and solder the IC's GND directly to the ground plane. Fig. 35 to 37 are the recommended layout diagrams.
Component Selection
1. Inductor Selection
An inductor value of 22H performs well in most applications. The SS6610 series also work with inductors in the 10H to 47H range. An inductor with higher peak inductor current creates a higher output voltage ripple (IPEAK X output filter capacitor ESR). The inductor's DC resistance significantly affects efficiency. We can calculate the maximum output current as follows:
IOUT(MAX )
VIN VOUT - VIN = ILIM - t OFF VOUT 2xL
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Ripple Voltage Reduction
Two or three parallel output capacitors can significantly improve the output ripple voltage of the SS6610/11. The addition of an extra input capacitor results in a stable output voltage. Fig.38 shows the application circuit with the above features. Figures 39 to 46 show the performance of the circuit in Figure 38.
APPLICATION EXAMPLES
VIN
VIN C1 47F
L 22H LX R1 LBI R2 0.1F C4 GND
SS6610/11
SHDN
C1 47F
L 22H
OUT C2 0.1F
R4 100K
LBO
VOUT C3 47F
R1
LX
OUT C2 0.1F
VOUT C3 47F
LBI
SHDN
R2 0.1F C4 GND REF R4 100K
REF
LBO
FB LOW BATTERY OUTPUT
FB
LOW BATTERY OUTPUT
L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
SS6610/11 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
Fig. 32. VOUT = 3.3V Application Circuit.
Fig. 33. VOUT = 5.0V Application Circuit.
VIN
L 22H
C1 47F LX VOUT
OUT
R1 LBI SHDN R2 REF 0.1F C4 LBO GND FB 100K R4
C2 0.1F R5
C3 47F
LOW BATTERY OUTPUT R6
SS6610/11
L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER VOUT=VREF*(1+R5/R6)
Fig. 34 An Adjustable Output Application Circuit
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IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIII
Fig. 35. Top layer
Fig. 36. Bottom layer
L1 22H
Fig. 37. Placement
VIN
+ VIN C1 100F
+ C2 100F
C3 0.1F + 8 OUT LX 7 6 GND 5 SHDN + +
VOUT +
1 FB 2 LBI R2 R6 3 LBO 4 REF LBI SS6610/11 LBO C4 100nF R5=0, R6=open; for VOUT=3.3V R5=open, R6=0; for VOUT=5.0V VOUT=1.23(1+R5/R6); for adjustable output voltage
R1 R3 R4 R5 100K
C7 0.1F 100F 100F C5 C6
C8 100F
R7 10k ShutDown
L1: TDK SLF7045T-22OMR90 C1~C2, C6~8: NIPPON Tantalum Capacitor 6MCM107MCTER
Fig. 38 SS6610/11 application circuit with small ripple voltage.
100 95 90 85 80 60
VIN=3.6V
50
SS6610 (I LIMIT =1A)
Ripple Voltage (mV)
VIN=3.6V
40
Efficiency (%)
75 70 65 60 55 50 45 40 35 30 0.01 0.1
VIN=2.4V
30
SS6610 (ILIMIT =1A)
VOUT=5.0V VIN=1.2V
20
VIN=2.4V VIN=1.2V VOUT=5.0V L=22H
0 100 200 300 400 500 600 700
10
L=22H
0 1 10 100 1000
Output Current (mA)
Output Current (mA)
Fig. 39
Efficiency (ref. to Fig.38)
Fig. 40
Ripple Voltage (ref. to Fig.38)
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60 95 90 85 80 60
VIN=3.6V
50
SS6611 (I LIMIT =0.65A)
Ripple Voltage (mV)
VIN=3.6V
40
Efficiency (%)
75 70 65 60 55 50 45 40 35 30 25 0.01
VIN=2.4V
30
SS6611 (I LIMIT =0.65A)
VIN=1.2V VOUT=5.0V
20
VIN=2.4V
10
VOUT=5.0V L=22H
L=22H
0 0.1 1 10 100 1000 0
VIN=1.2V
100 200 300
400
500
Output Current (mA)
Output Current (mA)
Fig. 41
100 95 90
Efficiency (ref. to Fig.38)
50
Fig. 42
Ripple Voltage (ref. to Fig.38)
VIN=2.4V
45 40
SS6610 (ILIMIT =1A)
Ripple Voltage (mV)
85
Efficiency (%)
35 30 25 20 15 10 5 0
80 75 70 65 60 55 50 45 40 0.01 0.1 1 10
VIN=1.2V
VIN=2.4V VOUT=3.3V L=22H
0 50 100 150 200 250 300 350 400 450 500 550 600
SS6610 (I LIMIT =1A)
VOUT=3.3V L=22H
100 1000
VIN=1.2V
Output Current (mA)
Output Current (mA)
Fig. 43
100 95 90
Efficiency (ref. to Fig.38)
35
Fig. 44
Ripple Voltage (ref. to Fig.38)
SS6611 (I LIMIT =0.65A)
30
Ripple Voltage (mV)
85
25
Efficiency (%)
80 75 70 65 60 55 50 45 40 0.01 0.1
VIN=2.4V
20
VIN=2.4V
15
SS6611 (I LIMIT =0.65A)
VOUT=3.3V VIN=1.2V
1 10
10
VIN=1.2V
5
VOUT=3.3V L=22H
L=22H
100 1000
0 0 50 100 150 200 250 300 350 400
Output Current (mA)
Output Current (mA)
Fig. 45
Efficiency (ref. to Fig.38)
Fig. 46
Ripple Voltage (ref. to Fig.38)
4/21/2006 Rev.3.01
www.SiliconStandard.com
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SS6610/11G
PHYSICAL DIMENSIONS
8 LEAD MSOP
D
SYMBOL A1 A2
E E1
MIN -0.76 0.28 0.13 2.90 4.80 2.90 0.65 0.40
MAX 0.20 0.97 0.38 0.23 3.10 5.00 3.10 0.66
b C D E
e A2 C
A1
E1 e L
L
b
All dimensions in millimeters. Dimensions do not include mold protrusions.
PART MARKING
1610PO SSSYM
SS6610G = 1610PO, SS6611G = 1611PO Date/lot code: SSS = lot code sequence Y = year (C=2005, I=2006, D=2007...) M = month (1-9,A,B,C)
PACKING:
Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
4/21/2006 Rev.3.01
www.SiliconStandard.com
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